Method of manufacturing flash memory device
US8324050B2 · kind B2 · utility
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1References
19Claims
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Assignee
Inventor
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Dec 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a flash memory device comprises forming a gate insulating layer on a semiconductor substrate, forming silicon seed crystals on a surface of the gate insulating layer by reacting a nitrogen or oxygen atmosphere gas and a silicon source gas, forming a first layer for a floating gate over the gate insulating layer and the silicon seed crystals by increasing an amount of the silicon source gas, and forming a second layer for a floating gate on the first layer for a floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.