Methods of manufacturing buried wiring type substrate and semiconductor device incorporating buried wiring type substrate
US8324055B2 · kind B2 · utility
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4References
8Claims
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Key dates
| Filing date | Mar 10, 2011 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Mar 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a buried wiring type substrate comprises implanting hydrogen ions into a single crystalline substrate through a first surface thereof to form an ion implantation region, forming a conductive layer comprising a metal on the first surface of the single crystalline substrate, forming an insulation layer comprising silicon oxide on the conductive layer, bonding the insulation layer to a support substrate to form a preliminary buried wiring type substrate, and separating the single crystalline substrate at the ion implantation region to form a single crystalline semiconductor layer on the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.