Substrate treating method and method of manufacturing semiconductor device using the same
US8324116B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Jun 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.