Fuse of a semiconductor device
US8324664B2 · kind B2 · utility
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2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 8, 2011 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.