Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory
US8324697B2 · kind B2 · utility
56Cited by
3References
3Claims
0Family size
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Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.