Power amplifier

US8324707B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tadahiro Sasaki · Tokyo, JP
• Kazuhide Abe · Tokyo, JP
• Atsuko Iida · Yokohama, JP
• Kazuhiko Itaya · Yokohama, JP

Key dates

• Filing date: Mar 17, 2011
• Grant date: Dec 4, 2012
• Expiry date: Apr 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.