Power semiconductor module with a hermetically tight circuit arrangement and method for producing such a module

US8324717B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Christian Goebl · Koblenzer Straße, DE
• Heiko Braml · Ebermannstadt, DE

Key dates

• Filing date: Apr 6, 2009
• Grant date: Dec 4, 2012
• Expiry date: Jan 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.