Dielectric film formation using inert gas excitation
US8329262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Mar 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.