Method of fabricating a charge trap NAND flash memory
US8329545B1 · kind B1 · utility
10Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2008 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.