Methods of fabricating flash memory devices having shared sub active regions
US8329574B2 · kind B2 · utility
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9References
15Claims
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Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Sep 13, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
Flash memory devices include a pair of elongated, closely spaced-apart main active regions in a substrate. A sub active region is also provided in the substrate, extending between the pair of elongated, closely spaced-apart main active regions. A bit line contact plug is provided on, and electrically contacting, the sub active region and being at least as wide as the sub active region. An elongated bit line is provided on, and electrically contacting, the bit line contact plug remote from the sub active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.