Method of manufacturing semiconductor device
US8329584B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.