Method for reducing line width roughness with plasma pre-etch treatment on photoresist
US8329585B2 · kind B2 · utility
4Cited by
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20Claims
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Key dates
| Filing date | Nov 17, 2009 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Apr 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features is provided. The method includes (a) non-etching plasma pre-etch treatment of the photoresist mask, and (b) etching of a feature in the etch layer through the pre-treated photoresist mask using an etching gas. The non-etching plasma pre-etch treatment includes (a1) providing a treatment gas containing H2 and COS, (a2) forming a plasma from the treatment gas, and (a3) stopping the treatment gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.