Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8329599B2 · kind B2 · utility
551Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Feb 18, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.