Patent · US Active

LED having current spreading layer

US8330174B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Matthias Sabathil · Regensburg, DE
Matthias Peter · Orpund, CH

Key dates

Filing date	Nov 13, 2008
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Dec 22, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/173
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An LED having a radiation-emitting active layer (7), an n-type contact (10), a p-type contact (9) and a current spreading layer (4) is specified. The current spreading layer (4) is arranged between the active layer (7) and the n-type contact (10). Furthermore, the current spreading layer (4) has a multiply repeating layer sequence having at least one n-doped layer (44), an undoped layer (42) and a layer composed of AlxGa1-xN (43), where 0≦x≦1. The layer composed of AlxGa1-xN (43) has a concentration gradient of the Al content.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.