Semiconductor device having semiconductor substrate including diode region and IGBT region
US8330185B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The diode drift region and the IGBT drift region are a continuous region across a boundary region between the diode region and the IGBT region. A first separation region and a second separation region are formed within the boundary region. The first separation region is formed of a p-type semiconductor, formed in a range extending from an upper surface of the semiconductor substrate to a position deeper than both of a lower end of an anode region and a lower end of a body region, and bordering with the anode region. The second separation region is formed of a p-type semiconductor, formed in a range extending from the upper surface of the semiconductor substrate to a position deeper than both of the lower end of the anode region and the lower end of the body region, and bordering with the body region. The second separation region is separated from the first separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.