One-time programmable memory and method for making the same
US8330189B2 · kind B2 · utility
11Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Dec 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.