Patent · US Active

System and method of transistor switch biasing in a high power semiconductor switch

US8330519B2 · kind B2 · utility

33Cited by

6References

18Claims

0Family size

Assignee

SiGe Semiconductor, Inc. · CA

Inventors

Lui LAM · Winchester, US
Hanching Fuh · Brookline, US

Key dates

Filing date	Jul 9, 2010
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Aug 25, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0018
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.