Patent · US Active

Passivation layers in acoustic resonators

US8330556B2 · kind B2 · utility

11Cited by

20References

16Claims

0Family size

Assignee

AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. · SG

Inventors

Daniel J. Miller · San Francisco, US
Martha Johnson · Monterey Park, US

Key dates

Filing date	Nov 23, 2009
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Nov 10, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49005
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An acoustic resonator, comprises a substrate and a first passivation layer disposed over the substrate. The first passivation layer comprises a first layer of silicon carbide (SiC). The acoustic resonator further comprises a first electrode disposed over the passivation layer, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator comprises a second passivation layer disposed over the second electrode. The second passivation layer comprises a second layer of silicon carbide (SiC).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.