Changing a memristor state
US8331131B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jul 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/55
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.