3D nonvolatile memory device and method for fabricating the same
US8331149B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | May 18, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A 3D nonvolatile memory device includes: a plurality of channel structures including a plurality of channel layers and interlayer dielectric layers, which are alternately stacked, and extended in a first direction; a plurality of word lines extended in a second direction at least substantially perpendicular to the first direction; a plurality of row select lines connected to the plurality of channel layers, respectively, and extended in the second direction; and a plurality of column select lines connected to the plurality of channel structures, respectively, and extended in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.