Sputtering target, oxide semiconductor film and semiconductor device
US8333913B2 · kind B2 · utility
48Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Mar 28, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/81
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.