Masashi Kasami
19Patents
11h-index
11Co-inventors
61Inventor score
Filing activity: Feb 6, 2008 → Nov 20, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8384077B2 | Field effect transistor using oxide semicondutor and method for manufacturing the same | Electricity | 245 | Active |
| US8981369B2 | Field effect transistor using oxide semiconductor and method for manufacturing the same | Electricity | 87 | Active |
| US8461583B2 | Oxide semiconductor field effect transistor and method for manufacturing the same | Electricity | 80 | Active |
| US8748879B2 | Semiconductor device, thin film transistor and a method for producing the same | Electricity | 71 | Active |
| US8642402B2 | Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device | Electricity | 66 | Active |
| US8723175B2 | Oxide semiconductor field effect transistor and method for manufacturing the same | Electricity | 62 | Active |
| US8791457B2 | Oxide semiconductor field effect transistor and method for manufacturing the same | Electricity | 56 | Active |
| US8333913B2 | Sputtering target, oxide semiconductor film and semiconductor device | Chemistry; Metallurgy | 48 | Active |
| US8530891B2 | Field-effect transistor, and process for producing field-effect transistor | Electricity | 29 | Active |
| US8668849B2 | Sputtering target, oxide semiconductor film and semiconductor device | Chemistry; Metallurgy | 27 | Active |
| US8445903B2 | Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing same | Electricity | 26 | Active |
| US8647537B2 | Oxide sintered body and sputtering target | Chemistry; Metallurgy | 5 | Active |
| US9206502B2 | In—Ga—Zn oxide sputtering target and method for producing same | Electricity | 3 | Active |
| US9214519B2 | In2O3—SnO2—ZnO sputtering target | Electricity | 1 | Active |
| US9209257B2 | Oxide sintered body and sputtering target | Chemistry; Metallurgy | 1 | Active |
| US9054196B2 | Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn | Electricity | 0 | Active |
| US8999208B2 | In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element | Electricity | 0 | Active |
| US8664136B2 | Indium oxide sintered compact and sputtering target | Chemistry; Metallurgy | 0 | Active |
| US9269573B2 | Thin film transistor having crystalline indium oxide semiconductor film | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.