Methods of forming pattern structures
US8334148B2 · kind B2 · utility
51Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2011 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.