Patent · US Active

Method for fabricating a direct wafer bonded optoelectronic device

US8334151B2 · kind B2 · utility

7Cited by

15References

13Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Akihiko Murai · Goleta, US
Christina Ye Chen · Santa Clara, US
Daniel Bryce Thompson · Walnut Creek, US
Lee McCarthy · Lompoc, US
Steven P. DenBaars · Goleta, US
Shuji Nakamura · Goleta, US
Umesh Mishra · Montecito, US

Key dates

Filing date	Apr 1, 2010
Grant date	Dec 18, 2012
Priority date	—
Expiry date	Nov 23, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.