Substrate for growing a III-V light emitting device
US8334155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jul 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.