Semiconductor power device having shielding electrode for improving breakdown voltage
US8334566B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 1, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The present invention provides a semiconductor power device including a substrate, an epitaxial layer disposed on the substrate and having at least a first trench and a second trench, a gate structure disposed in the first trench, and a termination structure disposed in the second trench. The gate structure includes a gate electrode, a gate dielectric layer disposed on an upper sidewall of the first trench and between the gate electrode and the epitaxial laver, and a shield electrode disposed under the gate electrode. The termination structure includes a termination electrode and a dielectric layer disposed between the termination electrode and a sidewall of the second trench. The termination electrode and the shield electrode are connected to each other. In addition, a body region is disposed in the epitaxial layer, and the second trench is only surrounded by the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.