Inventor · San Jose, CA, US

Sung-Shan Tai

44Patents
10h-index
28Co-inventors
71Inventor score

Filing activity: Apr 16, 1999 → Apr 27, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US6509233B2 Method of making trench-gated MOSFET having cesium gate oxide layer Electricity 35 Expired
US6277695A Method of forming vertical planar DMOSFET with self-aligned contact Electricity 33 Expired
US7256446B2 One time programmable memory cell Electricity 24 Expired
US8394702B2 Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process Electricity 20 Active
US8252647B2 Fabrication of trench DMOS device having thick bottom shielding oxide Electricity 18 Active
US8907416B2 Dual gate oxide trench MOSFET with channel stop trench Electricity 16 Active
US8334566B2 Semiconductor power device having shielding electrode for improving breakdown voltage Electricity 14 Active
US8187939B2 Direct contact in trench with three-mask shield gate process Electricity 13 Active
US9214545B2 Dual gate oxide trench MOSFET with channel stop trench Electricity 13 Active
US7667264B2 Shallow source MOSFET Electricity 11 Expired
US7875541B2 Shallow source MOSFET Electricity 10 Active
US8748268B1 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Electricity 10 Active
US9337329B2 Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier source Electricity 9 Active
US9006053B2 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Electricity 8 Active
US8053315B2 Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer Electricity 8 Active
US9024378B2 Device structure and manufacturing method using HDP deposited source-body implant block Electricity 7 Active
US8372708B2 Device structure and manufacturing method using HDP deposited using deposited source-body implant block Electricity 7 Active
US8035159B2 Device structure and manufacturing method using HDP deposited source-body implant block Electricity 6 Active
US8048775B2 Process of forming ultra thin wafers having an edge support ring Emerging Cross-Sectional Technologies 5 Active
US8058687B2 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET Electricity 5 Active
US7824977B2 Completely decoupled high voltage and low voltage transistor manufacturing processes Electricity 5 Active
US7855422B2 Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process Emerging Cross-Sectional Technologies 5 Active
US9000514B2 Fabrication of trench DMOS device having thick bottom shielding oxide Electricity 5 Active
US7932148B2 Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) Electricity 4 Active
US7492005B2 Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.