Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same
US8335479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2012 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Apr 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/525
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.