Method for forming etching mask, method for fabricating three-dimensional structure and method for fabricating three-dimensional photonic crystalline laser device
US8337712B2 · kind B2 · utility
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14References
5Claims
0Family size
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Key dates
| Filing date | May 14, 2008 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.