Semiconductor device including field effect transistor and method of forming the same
US8338261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Mar 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
Abstract
A semiconductor device includes a gate insulator and a gate electrode stacked on a substrate, a source/drain pattern which fills a recess region formed at opposite sides adjacent to the gate electrode, the source/drain pattern being made of silicon-germanium doped with dopants and a metal germanosilicide layer disposed on the source/drain pattern. The metal germanosilicide layer is electrically connected to the source/drain pattern. Moreover, a proportion of germanium amount to the sum of the germanium amount and silicon amount in the metal germanosilicide layer is lower than that of germanium amount to the sum of the germanium amount and silicon amount in the source/drain pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.