Dual wavelength exposure method and system for semiconductor device manufacturing
US8338262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Nov 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.