Film formation method, film formation apparatus, and method for using film formation apparatus
US8338312B2 · kind B2 · utility
10Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Feb 10, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4554
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.