Patent · US Active

Terahertz radiation anti-reflection devices and methods for handling terahertz radiation

US8338802B2 · kind B2 · utility

0Cited by

4References

45Claims

0Family size

Assignee

Rensselaer Polytechnic Institute · US

Inventors

Xi Zhang · Chengdu, CN
Pengyu Han · San Jose, US
Yuting Chen · Beijing, CN

Key dates

Filing date	Aug 26, 2011
Grant date	Dec 25, 2012
Priority date	—
Expiry date	Aug 26, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49826
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A terahertz (THz) anti-reflection device, for example, a broadband tunable THz anti-reflection device, includes a silicon substrate having a plurality of recesses, each of the plurality of recesses having a plurality of cavities of decreasing dimension. The cavities may be nested polygonal cavities, for example, having a square or rectangular cross section. The recesses having the cavities may be positioned at regular periods, for example, periods ranging from 10 μm to 20 μm. The devices may be fabricated by conventional lithographic methods. Also disclosed are methods for modifying terahertz radiation and methods for fabricating anti-reflection devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.