Graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications
US8338825B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/261
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.