Semiconductor light emitting apparatus having stacked reflective dielectric films
US8338844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0363
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.