Backside illuminated image sensor with stressed film

US8338856B2 · kind B2 · utility

Assignee

• OmniVision Technologies, Inc. · US

Inventors

• Hsin-Chih Tai · San Jose, US
• Howard E. Rhodes · Boise, US
• Wei Zheng · Beijing, CN
• Vincent Venezia · Los Gatos, US
• Yin Qian · Milpitas, US
• Duli Mao · Sunnyvale, US

Key dates

• Filing date: Aug 10, 2010
• Grant date: Dec 25, 2012
• Expiry date: Oct 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.