Inventor · Beijing, CN

Wei Zheng

148Patents
17h-index
291Co-inventors
89Inventor score

Filing activity: Dec 20, 2001 → Apr 8, 2025

Most-cited inventions

PatentTitleAreaCited byStatus
US9690936B1 Multistage system and method for analyzing obfuscated content for malware Physics 175 Active
US6912163B2 Memory device having high work function gate and method of erasing same Electricity 113 Expired
USD798807S1 Charger General 96 Active
US7365389B1 Memory cell having enhanced high-K dielectric Electricity 76 Expired
US6782350B1 Method and apparatus for managing resources Physics 60 Expired
US6639271B1 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same Electricity 57 Expired
US6630383B1 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer Electricity 46 Expired
US9386088B2 Accelerating service processing using fast path TCP Electricity 46 Active
US6744675B1 Program algorithm including soft erase for SONOS memory device Physics 36 Expired
US6754105B1 Trench side wall charge trapping dielectric flash memory device Electricity 36 Expired
US8338856B2 Backside illuminated image sensor with stressed film Electricity 31 Active
US7188170B1 System for managing resources Physics 28 Expired
US6885590B1 Memory device having A P+ gate and thin bottom oxide and method of erasing same Electricity 26 Expired
US6693321B1 Replacing layers of an intergate dielectric layer with high-K material for improved scalability Electricity 24 Expired
US10657251B1 Multistage system and method for analyzing obfuscated content for malware Physics 23 Active
US9698185B2 Partial buried channel transfer device for image sensors Electricity 22 Active
US8364682B1 Identifier mapping from joined data Physics 18 Active
US8424005B2 System and method for time-aware run-time to guarantee time Physics 15 Active
US8071429B1 Wafer dicing using scribe line etch Electricity 15 Active
US8233066B2 Image sensor with improved black level calibration Electricity 14 Active
US6861307B2 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same Electricity 12 Expired
US6897110B1 Method of protecting a memory array from charge damage during fabrication Electricity 10 Expired
US8569856B2 Pad design for circuit under pad in semiconductor devices Electricity 10 Active
US7071538B1 One stack with steam oxide for charge retention Electricity 10 Expired
US6735123B1 High density dual bit flash memory cell with non planar structure Emerging Cross-Sectional Technologies 8 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.