Schottky device
US8338906B2 · kind B2 · utility
2Cited by
48References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2008 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | May 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
An integrated circuit structure has a metal silicide layer formed on an n-type well region, a p-type guard ring formed on the n-type well region and encircling the metal silicide layer. The outer portion of the metal silicide layer extends to overlap the inner edge of the guard ring, and a Schottky barrier is formed at the junction of the internal portion of the metal silicide layer and the well region. A conductive contact is in contact with the internal portion and the outer portion of the metal silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.