Patent · US Active

Multiple seal ring structure

US8338917B2 · kind B2 · utility

8Cited by
0References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 2, 2010
Grant dateDec 25, 2012
Priority date
Expiry dateJan 16, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.