Defect monitoring in semiconductor device fabrication
US8339449B2 · kind B2 · utility
83Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Jun 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming a device is presented. The method includes providing a substrate containing at least a partially formed device thereon. The device comprises at least one defect site. A pixilated image of the defect site is acquired, and each pixel comprises a grey level value (GLV). Surrounding noises of the defect site is eliminated. A point of the image is identified as the center of the defect. A plurality of iterations to exclude outer edge pixels surrounding the center of the defect image is performed. The defect is categorized as a killer or non-killer defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.