Method and structure for top metal formation of liquid crystal on silicon devices
US8339553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an LCOS device having improved bonding pad features. The device has a substrate, a transistor layer overlying the substrate and an interlayer dielectric layer overlying the transistor layer. A first conductive layer is overlying the interlayer dielectric layer and a second interlayer dielectric layer is overlying the first conductive layer. An enlarged opening for a bonding pad structure is in a first portion of the second interlayer dielectric layer. A barrier metal layer is formed within the enlarged opening to form a liner that covers exposed regions of the enlarged opening. A metal material is overlying the liner to fill the enlarged opening. A thickness of an aluminum material is overlying the metal material. The device has a bonding pad structure formed from a first portion of the thickness of the aluminum material and is coupled to the metal material in the enlarged opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.