Storage element and memory
US8339840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2008 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.