Plasma processing apparatus and method of plasma distribution correction
US8343306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2008 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.