Patent · US Active

Method of stressing a thin pattern

US8343780B2 · kind B2 · utility

1Cited by

9References

35Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Jean-Charles Barbe · Seyssinet-Pariset, FR
Thomas Ernst · Morette, FR

Key dates

Filing date	Jul 5, 2005
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Feb 26, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6744
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.