Patent · US Active

Gallium nitride material processing and related device structures

US8343824B2 · kind B2 · utility

0Cited by

78References

27Claims

0Family size

Assignee

International Rectifier Corporation · US

Inventors

Edwin L. Piner · Cary, US
Jerry W. Johnson · Raleigh, US
John Claassen Roberts · Hillsborough, US

Key dates

Filing date	Jun 20, 2008
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Jun 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/018
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.