Reducing dislocation formation in semiconductor devices through targeted carbon implantation
US8343825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Mar 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/796
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.