Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production

US8343834B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Armin Willmeroth · Friedberg, DE
• Michael Rueb · Faak am See, AT

Key dates

• Filing date: Dec 16, 2011
• Grant date: Jan 1, 2013
• Expiry date: Dec 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.