Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum

US8343837B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Richard J. Carter · Los Altos, US
• Sven Beyer · Dresden, DE
• Joachim Metzger · Rockenberg, DE
• Robert Binder · Dresden, DE

Key dates

• Filing date: Jan 21, 2010
• Grant date: Jan 1, 2013
• Expiry date: Sep 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.