Wafer temporary bonding method using silicon direct bonding
US8343851B2 · kind B2 · utility
231Cited by
21References
16Claims
0Family size
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Key dates
| Filing date | Sep 17, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.