Method and structure for dividing a substrate into individual devices
US8343852B2 · kind B2 · utility
2Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.